general description silicon npn high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose quick reference data limiting values symbol parameter conditions min max unit v c e s m collector-emitter voltage peak value v be = 0v - 200 v v c e o collector-emitter voltage (open base) - 150 v i c collector current (dc) - 2 a i c m collector current pea k va lue - a p t o t total power dissipation t m b 25 - 20 w v c e s a t collector-emitter saturation voltage i c = 1.5a; i b = 0.15a - 1.5 v v f diode forward voltage i f = 1.5a 1.5 2.0 v t f fall time - s symbol parameter conditions min max unit v c e s m collector-emitter voltage peak value v be = 0v - 200 v v c e o collector-emitter voltage (open base) - 150 v v e b o emitter-base oltage (open colloctor) 5 v i c collector current (dc) - 2 a i b base current (dc) - 0.5 a p t o t total power dissipation tmb 25 - 20 w t s t g storage temperature -55 150 t j junction temperature - 150 symbol parameter conditions min max unit i c b o collector-base cut-off current v c b =200v - 0.2 ma i e b o emitter-base cut-off current v eb =5v - 0.2 ma v ( b r ) c e o collector-emitter breakdown voltage i c =1ma 150 v v c e s a t collector-emitter saturation voltages i c = 1.5a; i b = 0.15a - 1.5 v h f e dc current gain i c = 500ma; v c e = 5v 50 250 f t transition frequency at f = 5mhz i c = 0.5a; v c e = 12v 5 - mhz c c collector capacitance at f = 1mhz v c b = 10v 75 pf t o n on times us t s tum-off storage time us t f fall time us electrical characteristics to-220 wing shing computer components co., (h.k.)ltd. tel:(852)2341 9276 fax:(852)2797 8153 homepage: http://www.wingshing.com e-mail: wsccltd@hkstar.com
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